Momentum-Resolved Landau-Level Spectroscopy of Dirac Surface State in Bi2Se3
arXiv:1003.0100 · doi:10.1103/PhysRevB.82.081305
Abstract
We investigate Dirac fermions on the surface of the topological insulator Bi2Se3 using scanning tunneling spectroscopy. Landau levels (LLs) are observed in the tunneling spectra in a magnetic field. In contrast to LLs of conventional electrons, a field independent LL appears at the Dirac point, which is a hallmark of Dirac fermions. A scaling analysis of LLs based on the Bohr-Sommerfeld quantization condition allowed us to determine the dispersion of the surface band. Near the Fermi energy, fine peaks mixed with LLs appear in the spectra, which may be responsible for the anomalous magneto-fingerprint effect [J. G. Checkelsky et al., Phys. Rev. Lett. 103, 246601 (2009)].
4 pages, 4 figures
References in corpus (8)
- The electronic properties of graphene
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Topological Insulators with Inversion Symmetry
- Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
- A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
- Topological Surface States Protected From Backscattering by Chiral Spin Texture
- Scanning Tunneling Spectroscopy of Graphene on Graphite
- Bulk Fermi surface coexistence with Dirac surface state in BiSe: a comparison of photoemission and Shubnikov-de Haas measurements
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