Excitonic instability and electric-field-induced phase transition towards a two dimensional exciton condensate
arXiv:cond-mat/9605166 · doi:10.1103/PhysRevLett.77.900
Abstract
We present an InAs-GaSb-based system in which the electric-field tunability of its 2D energy gap implies a transition towards a thermodynamically stable excitonic condensed phase. Detailed calculations show a 3 meV BCS-like gap appearing in a second-order phase transition with electric field. We find this transition to be very sharp, solely due to exchange interaction, and so, the exciton binding energy is greatly renormalized even at small condensate densities. This density gradually increases with external field, thus enabling the direct probe of the Bose-Einstein to BCS crossover.
LaTex, 11 pages, 3 ps figures, To appear in PRL
References in corpus (1)
Cited by in corpus (40)
- Quantum Spin Hall Effect in Inverted Type II Semiconductors
- Gate-Tuned Spontaneous Exciton Insulator in Double-Quantum Wells
- Interplay of exciton condensation and quantum spin Hall effect in InAs/GaSb bilayers
- Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators
- Spin degree of freedom in two dimensional exciton condensates
- Engineering Superfluidity in Electron-Hole Double Layers
- Anomalous Quantum Oscillations of Interacting Electron-hole Gases in Inverted Type-II InAs/GaSb Quantum Wells
- Anomalous Conductance Oscillations in the Hybridization Gap of InAs/GaSb Quantum Wells
- Effects of strong correlations for 2D Bose-Einstein condensed dipolar excitons
- Spin states in InAs/AlSb/GaSb semiconductor quantum wells
- Metal-Insulator oscillations in a Two-dimensional Electron-Hole system
- Transport studies of electron-hole and spin-orbit interaction in GaSb/InAsSb core-shell nanowire quantum dots
- Energy gap tuning and gate-controlled topological phase transition in InAs/InGaSb composite quantum wells
- Phonon-assisted relaxation kinetics of statistically-degenerate excitons in high-quality quantum wells
- Evidence for an Excitonic Insulator State in TaPdTe
- Electron-hole interactions in coupled InAs-GaSb quantum dots based on nanowire crystal phase templates
- Influence of etching processes on electronic transport in mesoscopic InAs/GaSb quantum well devices
- Dynamical exciton condensates in biased electron-hole bilayers
- Excitonic Mott transition in double quantum wells
- Superfluidity of two- dimensional excitons in flat and harmonic traps
- Electric control of inverted gap and hybridization gap in type II InAs/GaSb quantum wells
- Effects of Disorder on the Transport of Collective Modes in an Excitonic Condensate
- Resistive signature of excitonic coupling in an electron-hole double layer with a middle barrier
- Topological Charge/spin density Wave in InAs/GaSb Quantum Wells under an In-plane Magnetic Field
- Interplay of quantum spin Hall effect and spontaneous time-reversal symmetry breaking in electron-hole bilayers I: Transport properties
- Extracting band structure characteristics of GaSb/InAs core-shell nanowires from thermoelectric properties
- Electrical Control of Two-Dimensional Electron-Hole Fluids in the Quantum Hall Regime
- Interaction and coherence in 2D bilayers
- Magneto-infrared modes in InAs-AlSb-GaSb coupled quantum wells
- Variable resistance at the boundary between semimetal and excitonic insulator
- Interplay of quantum spin Hall effect and spontaneous time-reversal symmetry breaking in electron-hole bilayers II: Zero-field topological superconductivity
- Dissipationless Spin-Charge Conversion in Excitonic Pseudospin Superfluid
- Electrical tuning of helical edge states in topological multilayers
- Exciton Condensation in Landau Levels of Quantum Spin Hall Insulators
- Density of states and excitonic condensation in the double layer correlated systems
- Excitonic gap formation in neutral bilayer structures
- Helicoidal excitonic phase in an electron-hole double layer system
- Lithography defined semiconductor moires with anomalous in-gap quantum Hall states
- Realization of independent contacts in barrier-separated InAs/GaSb quantum wells
- Evidence for an excitonic insulator phase in a zero-gap InAs/GaSb bilayer