Variable resistance at the boundary between semimetal and excitonic insulator
arXiv:cond-mat/0505247 · doi:10.1016/j.ssc.2004.07.076
Abstract
We solve the two-band model for the transport across a junction between a semimetal and an excitonic insulator. We analyze the current in terms of two competing terms associated with neutral excitons and charged carriers, respectively. We find a high value for the interface resistance, extremely sensitive to the junction transparency. We explore favorable systems for experimental confirmation.
Latex Elsevier Style, 14 pages, 3 postscript figures. Special Issue of Solid State Communications on Spontaneous Coherence in Excitonic Systems