Excitonic gap formation in neutral bilayer structures
arXiv:1508.00508 · doi:10.1088/0031-8949/90/8/085806
Abstract
We consider the pairing between conduction band electrons, and the valence band holes in the neutral bilayer-type structures. By employing the bilayer Hubbard model, we show the possibility of the inter-plane exciton formation in the system without applied external field. The in-plane and inter-plane Coulomb interaction effects on the pairing mechanism are considered, and the role of the in-plane particle hopping asymmetry on the gap behavior is analyzed in the paper. We show that both Frenkel-type pairing channel and Wannier-Mott-type excitonic pairings are present in the considered system. We analyze also the structure of the chemical potential in the bilayer system. The temperature effects, and the tunable inter-plane electron hopping effects are discussed. For the Frenkel channel, we have shown a particular behavior of the chemical potential at the very low temperatures, which is related to the degenerated Frenkel-gap.
12 pages, 14 figures (in the arXive version), 12 pages, 14 figures (in the published version)
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