Universal Scaling Behavior of Anomalous Hall Effect and Anomalous Nernst Effect in Itinerant Ferromagnets

Abstract

Anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) in a variety of ferromagnetic metals including pure metals, oxides, and chalcogenides, are studied to obtain unified understandings of their origins. We show a universal scaling behavior of anomalous Hall conductivity ${\sigma }_{xy}$ as a function of longitudinal conductivity ${\sigma }_{xx}$ over five orders of magnitude, which is well explained by a recent theory of the AHE taking into account both the intrinsic and extrinsic contributions. ANE is closely related with AHE and provides us with further information about the low-temperature electronic state of itinerant ferromagnets. Temperature dependence of transverse Peltier coefficient ${\alpha }_{xy}$ shows an almost similar behavior among various ferromagnets, and this behavior is in good agreement quantitatively with that expected from the Mott rule.

4pages, 4figures, 1table

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Cited by in corpus (211)

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• All Electrical Access to Topological Transport Features in Mn${}_{1.8}$PtSn Films
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• A Fermi Surface Descriptor Quantifying the Correlations between Anomalous Hall Effect and Fermi Surface Geometry
• Anomalous and Planar Nernst effects in thin-films of half-metallic ferromagnet La2/3Sr1/3MnO3
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• Electrical Conductivity in Quantum Materials
• Nernst Plateau in the Quantum Limit of Low-Carrier-Density Topological Insulators
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