Gate tunable anomalous Hall effect: a Berry curvature probe at oxides interfaces
arXiv:2202.04664 · doi:10.1103/PhysRevB.106.075430
Abstract
The characterization and the experimental measurement of the Berry curvature in solids have become an increasingly relevant task in condensed matter physics. We present the theoretical prediction of a gate tunable anomalous Hall effect (AHE) in a non magnetic oxide interface as a hallmark of a non-trivial Berry curvature. The observed AHE at low-temperatures in the presence of a planar magnetic field comes from a multiband low-energy model with a generalized Rashba interaction that supports characteristic out-of-plane spin and orbital textures. We also discuss strategies for reconstructing the Berry curvature from the AHE non-linearities in (111) SrTiO heterostructure interfaces.
16 pages, 12 figures. Corrected typo in Eq. (A9)
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Cited by in corpus (12)
- Designing spin and orbital sources of Berry curvature at oxide interfaces
- The quantum metric of electrons with spin-momentum locking
- Orbital design of Berry curvature: pinch points and giant dipoles induced by crystal fields
- Engineered Josephson diode effect in kinked Rashba nanochannels
- Large nonlinear Hall effect and Berry curvature in KTaO3 based two-dimensional electron gas
- Non-linear anomalous Edelstein response at altermagnetic interfaces
- Electric dipole spin resonance in single and two electron quantum dot defined in two-dimensional electron gas at the SrTiO/LaAlO interface
- Effect of confinement and Coulomb interactions on the electronic structure of (111) LaAlO/SrTiO interface
- Edelstein Effect in Isotropic and Anisotropic Rashba Models
- Dirac-like fermions anomalous magneto-transport in a spin-polarized oxide two-dimensional electron system
- Tunneling anisotropic spin galvanic effect
- Boltzmann theory of the inverse Edelstein effect in a two-dimensional Rashba gas