Antisite effect on ferromagnetism in (Ga,Mn)As

Abstract

We study the Curie temperature and hole density of (Ga,Mn)As while systematically varying the As-antisite density. Hole compensation by As-antisites limits the Curie temperature and can completely quench long-range ferromagnetic order in the low doping regime of 1-2% Mn. Samples are grown by molecular beam epitaxy without substrate rotation in order to smoothly vary the As to Ga flux ratio across a single wafer. This technique allows for a systematic study of the effect of As stoichiometry on the structural, electronic, and magnetic properties of (Ga,Mn)As. For concentrations less than 1.5% Mn, a strong deviation from Tc ~ p^0.33 is observed. Our results emphasize that proper control of As-antisite compensation is critical for controlling the Curie temperatures in (Ga,Mn)As at the low doping limit.

10 pages, 7 figures

References in corpus (1)

• Theory of ferromagnetic (III,Mn)V semiconductors

Cited by in corpus (6)

• Achieving High Curie Temperature in (Ga,Mn)As
• Optical Properties of III-Mn-V Ferromagnetic Semiconductors
• Discovery of Griffiths phase in itinerant magnetic semiconductor Fe_{1-x}Co_xS_2
• Onset of ferromagnetism in low-doped GaMnAs
• Stoichiometric growth of high Curie temperature heavily-alloyed GaMnAs
• Thermodynamic and thermoelectric properties of (Ga,Mn)As and related compounds