Interplay between carrier and impurity concentrations in annealed Ga${}_{1-x}$Mn${}_x$As intrinsic anomalous Hall Effect

Abstract

Investigating the scaling behavior of annealed Ga${}_{1-x}$Mn${}_x$As anomalous Hall coefficients, we note a universal crossover regime where the scaling behavior changes from quadratic to linear, attributed to the anomalous Hall Effect intrinsic and extrinsic origins, respectively. Furthermore, measured anomalous Hall conductivities when properly scaled by carrier concentration remain constant, equal to theoretically predicated values, spanning nearly a decade in conductivity as well as over 100 K in T${}_C$. Both the qualitative and quantitative agreement confirms the validity of new equations of motion including the Berry phase contributions as well as tunablility of the intrinsic anomalous Hall Effect.

4 pages, 5 figures

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• Anisotropic magnetoresistance of spin-orbit coupled carriers scattered from polarized magnetic impurities
• Anomalous Hall effect in field-effect structures of (Ga,Mn)As
• Interface-Induced Sign Reversal of the Anomalous Hall Effect in Magnetic Topological Insulator Heterostructures
• Absence of skew scattering in two-dimensional systems: Testing the origins of the anomalous Hall effect
• High Curie temperatures at low compensation in the ferromagnetic semiconductor (Ga,Mn)As
• Scaling parameters in anomalous and nonlinear Hall effects depend on temperature
• Unconventional temperature dependence of the anomalous Hall effect in HgCr2Se4
• Localization and the Anomalous Hall Effect in a "Dirty" Metallic Ferromagnet
• Scaling relation of the anomalous Hall effect in (Ga,Mn)As
• Vanishing of the anomalous Hall effect and enhanced carrier mobility in the spin-gapless ferromagnetic Mn2CoGa1-xAlx alloys
• Anomalous Hall effect in the antiferromagnetic Weyl semimetal SmAlSi
• Linear magnetization dependence and large intrinsic anomalous Hall effect in Fe78Si9B13 metallic glasses
• Influence of the Fermi surface shape on magnetotransport: the MnAs case