Dephasing in (Ga,Mn)As nanowires and rings

Abstract

To understand quantum mechanical transport in ferromagnetic semiconductor the knowledge of basic material properties like phase coherence length and corresponding dephasing mechanism are indispensable ingredients. The lack of observable quantum phenomena prevented experimental access to these quantities so far. Here we report about the observations of universal conductance fluctuations in ferromagnetic (Ga,Mn)As. The analysis of the length and temperature dependence of the fluctuations reveals a T^{-1} dependence of the dephasing time.

5 pages, 4 figures

Cited by in corpus (8)

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• Weak localization in ferromagnetic (Ga,Mn)As nanostructures
• Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells
• Quantum transport in ferromagnetic Permalloy nanostructures
• Electron transport in an open mesoscopic metallic ring
• Phase coherent transport in (Ga,Mn)As
• Mesoscopic conductance effects in InMnAs structures
• External Control of a Metal-Insulator Transition in GaMnAs Wires