Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays

Abstract

Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self aligned geometries, palladium electrodes with low contact resistance and high-k dielectric gate insulators are realized. Electrical transport in these miniature transistors is near ballistic up to high biases at both room and low temperatures. Atomic layer deposited (ALD) high-k films interact with nanotube sidewalls via van der Waals interactions without causing weak localization at 4 K. New fundamental understanding of ballistic transport, optical phonon scattering and potential interfacial scattering mechanisms in nanotubes are obtained.

Nano Letters, in press

References in corpus (4)

• Carbon Nanotubes as Schottky Barrier Transistors
• Electron-Phonon Scattering in Metallic Single-Walled Carbon Nanotubes
• High-Field, Quasi-Ballistic Transport in Short Carbon Nanotubes
• A Low-Temperature Atomic Layer Deposition Liftoff Method for Microelectronic and Nanoelectronic Applications

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