10 to 50 nm Long Quasi Ballistic Carbon Nanotube Devices Obtained Without Complex Lithography

Abstract

A simple method combining photolithography and shadow (or angle) evaporation is developed to fabricate single-walled carbon nanotube (SWCNT) devices with tube lengths L~10-50 nm between metal contacts. Large numbers of such short devices are obtained without the need of complex tools such as electron beam lithography. Metallic SWCNTs with lengths ~ 10 nm, near the mean free path (mfp) of lop~15 nm for optical phonon scattering, exhibit near-ballistic transport at high biases and can carry unprecedented 100 mA currents per tube. Semiconducting SWCNT field-effect transistors (FETs) with ~ 50 nm channel lengths are routinely produced to achieve quasi-ballistic operations for molecular transistors. The results demonstrate highly length-scaled and high-performance interconnects and transistors realized with SWCNTs.

arXiv commentPNAS, in press

References in corpus (5)

• High-Field Electrical Transport in Single-Wall Carbon Nanotubes
• Electron-Phonon Scattering in Metallic Single-Walled Carbon Nanotubes
• High-Field, Quasi-Ballistic Transport in Short Carbon Nanotubes
• Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays
• Ballistic Transport in Metallic Nanotubes With Reliable Pd Ohmic Contacts

Cited by in corpus (10)

• Thermal Conductance of an Individual Single-Wall Carbon Nanotube above Room Temperature
• High Performance N-Type Carbon Nanotube Field Effect Transistors with Chemically Doped Contacts
• Negative Differential Conductance and Hot Phonons in Suspended Nanotube Molecular Wires
• Breakdown Current Density of Graphene Nano Ribbons
• Electron Transport and Hot Phonons in Carbon Nanotubes
• Band Structure and Quantum Conductance of Nanostructures from Maximally-Localized Wannier Functions: The Case of Functionalized Carbon Nanotubes
• Electronic Devices Based on Purified Carbon Nanotubes Grown By High Pressure Decomposition of Carbon Monoxide
• Gated Spin Transport through an Individual Single Wall Carbon Nanotube
• Ultra-short suspended single-wall carbon nanotube transistors
• Magnetoresistance Devices Based on Single Walled Carbon Nanotubes