Numerical study of hydrogenic effective mass theory for an impurity P donor in Si in the presence of an electric field and interfaces

Abstract

In this paper we examine the effects of varying several experimental parameters in the Kane quantum computer architecture: A-gate voltage, the qubit depth below the silicon oxide barrier, and the back gate depth to explore how these variables affect the electron density of the donor electron. In particular, we calculate the resonance frequency of the donor nuclei as a function of these parameters. To do this we calculated the donor electron wave function variationally using an effective mass Hamiltonian approach, using a basis of deformed hydrogenic orbitals. This approach was then extended to include the electric field Hamiltonian and the silicon host geometry. We found that the phosphorous donor electron was very sensitive to all the experimental variables studied in our work, and thus to optimise the operation of these devices it is necessary to control all parameters varied in this paper.

7 pages, 2 tables, 10 figures

References in corpus (4)

• Decoherence of electron spin qubits in Si-based quantum computers
• Silicon-based Quantum Computation
• Strain effects on silicon donor exchange: Quantum computer architecture considerations
• Nuclear magnetic resonance spectrum of 31P donors in silicon quantum computer

Cited by in corpus (23)

• Silicon Quantum Electronics
• High precision quantum control of single donor spins in silicon
• Dangling-bond spin relaxation and magnetic 1/f noise from the amorphous-semiconductor/oxide interface: Theory
• Stark Tuning of Donor Electron Spins in Silicon
• Global control and fast solid-state donor electron spin quantum computing
• Electric Field Control of Shallow Donor Impurities in Silicon
• Donor Electron Wave Functions for Phosphorus in Silicon: Beyond Effective Mass Theory
• Electron Exchange Coupling for Single Donor Solid-State Qubits
• Theory of the Stark Effect for P donors in Si
• Orbital Stark effect and quantum confinement transition of donors in silicon
• Gate-induced ionization of single dopant atoms
• Resonant-pulse operations on the buried donor charge qubits in semiconductors
• Optimal control of the silicon-based donor electron spin quantum computing
• Molecular orbital calculations of two-electron states for P donor solid-state spin qubits
• Multi-valley envelope function equations and effective potentials for P impurity in silicon
• Towards Large-Scale Quantum Computation
• Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors
• Voltage Control of Exchange Coupling in Phosphorus Doped Silicon
• Large-scale atomistic density functional theory calculations of phosphorus-doped silicon quantum bits
• Effects of J-gate potential and interfaces on donor exchange coupling in the Kane quantum computer architecture
• Cross-talk compensation of hyperfine control in donor qubit architectures
• Dynamics of a driven spin coupled to an antiferromagnetic spin bath
• Auxiliary-level-assisted operations with charge qubits in semiconductors