In-plane Magnetoconductivity of Si-MOSFET's: A Quantitative Comparison between Theory and Experiment

Abstract

For densities above $n=1.6\times 10^{11}$ cm${}^{-2}$ in the strongly interacting system of electrons in two-dimensional silicon inversion layers, excellent agreement between experiment and the theory of Zala, Narozhny and Aleiner is obtained for the response of the conductivity to a magnetic field applied parallel to the plane of the electrons. However, the Fermi liquid parameter $F_0^{\sigma }(n)$ and the valley splitting ${\Delta }_V(n)$ obtained from fits to the magnetoconductivity, although providing qualitatively correct behavior (including sign), do not yield quantitative agreement with the temperature dependence of the conductivity in zero magnetic field. Our results suggest the existence of additional scattering processes not included in the theory in its present form.

References in corpus (5)

• Interaction corrections at intermediate temperatures: I. Longitudinal conductivity and kinetic equation
• Sharp increase of the effective mass near the critical density in a metallic 2D electron system
• Interaction corrections at intermediate temperatures: magneto-resistance in parallel field
• Hole-Hole Interaction Effect in the Conductance of the Two-Dimensional Hole Gas in the Ballistic Regime
• Spin polarization of strongly interacting 2D electrons: the role of disorder

Cited by in corpus (38)

• Metal-insulator transition in two-dimensional electron systems
• Friedel oscillations, impurity scattering and temperature dependence of resistivity in graphene
• Metal-insulator transitions and the effects of electron-electron interactions in two-dimensional electron systems
• Interaction-induced magnetoresistance in a two-dimensional electron gas
• Magnetoresistance in two-component systems
• Electron-electron interactions in the conductivity of graphene
• Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures
• The so-called two dimensional metal-insulator transition
• Interaction Corrections to Two-Dimensional Hole Transport in Large $r_s$ Limit
• Metallicity and its low temperature behavior in dilute 2D carrier systems
• Interaction Effects in Conductivity of a Two-Valley Electron System in High-Mobility Si Inversion Layers
• Electron-electron interaction correction and magnetoresistance in tilted fields in Si-based 2D systems
• Quantum corrections to the conductivity and Hall coefficient of a 2D electron gas in a dirty AlGaAs/GaAs/AlGaAs quantum well: transition from diffusive to ballistic regime
• Quantum corrections to the conductivity and Hall coefficient of a two-dimensional electron gas in a dirty AlGaAs/GaAs/AlGaAs quantum well: from the diffusive to the ballistic regime
• Intervalley scattering and weak localization in Si-based two-dimensional structures
• Probing Electron Interactions in a Two-Dimensional System by Quantum Magneto-Oscillations
• Temperature and Magnetic Field Enhanced Hall Slope of a Dilute 2D Hole System in the Ballistic Regime
• Spin polarization induced tenfold magneto-resistivity of highly metallic 2D holes in a narrow GaAs quantum well
• Critical behavior of transport and magnetotransport in 2D electron system in Si in the vicinity of the metal-insulator transition
• Novel Energy Scale in the Interacting 2D Electron System Evidenced from Transport and Thermodynamic Measurements
• Spin-valley interplay in two-dimensional disordered electron liquid
• Conductivity of Silicon Inversion Layers: comparison with and without in-plane magnetic field
• Test of scaling theory in two dimensions in the presence of valley splitting and intervalley scattering in Si-MOSFETs
• Effects of Electron-Electron and Electron-Phonon Interactions in Weakly Disordered Conductors and Heterostuctures
• Two dimensional electrons in (100) oriented silicon field effect structures in the region of low concentrations and high mobilities
• Interaction Correction to the Longitudinal Conductivity and Hall Resistivity in High Quality Two-Dimensional GaAs Electron and Hole Systems
• On the Electron-Electron Interactions in Two Dimensions
• Measurements of the magnetic properties of conduction electrons
• Scale-dependent theory of the disordered electron liquid
• Disordered electron liquid in double quantum well heterostructures: Renormalization group analysis and dephasing rate
• Renormalization group study of a two-valley system with spin-splitting
• Temperature dependent weak field Hall resistance in 2D carrier systems
• Metallic behaviour in SOI quantum wells with strong intervalley scattering
• Critical behavior of density of states near Fermi energy in low-dimensional disordered metals
• Effect of exchange electron-electron interaction on conductivity of InGaAs single and double quantum wells in ballistic regime
• Conductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic field
• Charge Transport in a Spin-Polarized 2D Electron System in Silicon
• Interactions in high-mobility 2D electron and hole systems