Anisotropic magnetoresistance: materials, models and applications

Abstract

Resistance of certain (conductive and otherwise isotropic) ferromagnets turns out to exhibit anisotropy with respect to the direction of magnetisation: R${}_{\parallel }$ different from R${}_{\perp }$ with reference to the electric current direction. This century-old phenomenon is reviewed both from the perspective of materials and physical mechanisms involved. More recently, this effect has also been extended to antiferromagnets. This opens the possibility for industrial applications reaching far beyond the current ones, e.g. hard drive read heads or position sensors.

arXiv comment50 pages (excl. references), 16 figures

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Cited by in corpus (10)

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• Four-fold Anisotropic Magnetoresistance in Antiferromagnetic Epitaxial Thin Films of MnPt${}_x$Pd${}_{1-x}$
• Even-in-magnetic field part of transverse resistivity as a probe of magnetic transitions
• Theory of polarization-switchable electrical conductivity anisotropy in nonpolar semiconductors
• Persistence of large and gate-tunable anisotropic magnetoresistance in an atomically thin antiferromagnet
• Crystallographic Orientation-Dependent Magnetotransport in the Layered Antiferromagnet -- CrSBr
• Observation of Magnetic-Anisotropy Crossover and High-Temperature Skyrmions in the Dirac Magnet Fe3Ge with a Distorted Kagome Lattice