Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform
arXiv:2211.00178 · doi:10.1021/acs.nanolett.2c04417
Abstract
Holes in silicon quantum dots are receiving significant attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, challenges remain in this material system including difficulties using charge sensing to determine the number of holes in a quantum dot, and in controlling the coupling between adjacent quantum dots. In this work, we address these problems by fabricating an ambipolar complementary metal-oxide-semiconductor (CMOS) device using multilayer palladium gates. The device consists of an electron charge sensor adjacent to a hole double quantum dot. We demonstrate control of the spin state via electric dipole spin resonance (EDSR). We achieve smooth control of the inter-dot coupling rate over two orders of magnitude and use the charge sensor to perform spin-to-charge conversion to measure the hole singlet-triplet relaxation time of 11 μs for a known hole occupation. These results provide a path towards improving the quality and controllability of hole spin-qubits.
References in corpus (19)
- A four-qubit germanium quantum processor
- Orbital mechanisms of electron spin manipulation by an electric field
- Spin relaxation and decoherence of holes in quantum dots
- A hole spin qubit in a fin field-effect transistor above 4 kelvin
- Electric Dipole Spin Resonance for Heavy Holes in Quantum Dots
- Ultrafast Hole Spin Qubit with Gate-Tunable Spin-Orbit Switch
- A singlet triplet hole spin qubit in planar Ge
- Electron-Hole Crossover in Graphene Quantum Dots
- A single hole spin with enhanced coherence in natural silicon
- Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits
- Hole spin qubits in Si FinFETs with fully tunable spin-orbit coupling and sweet spots for charge noise
- Electric Dipole Induced Spin Resonance in Disordered Semiconductors
- Electrical control of the -tensor of a single hole in a silicon MOS quantum dot
- Silicon quantum dot devices with a self-aligned second gate layer
- Dispersively probed microwave spectroscopy of a silicon hole double quantum dot
- Ambipolar quantum dots in intrinsic silicon
- Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire
- Single-charge occupation in ambipolar quantum dots
- A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration