Spin-relaxation times exceeding seconds for color centers with strong spin-orbit coupling in SiC

Abstract

Spin-active color centers in solids show good performance for quantum technologies. Several transition-metal defects in SiC offer compatibility with telecom and semiconductor industries. However, whether their strong spin-orbit coupling degrades their spin lifetimes is not clear. We show that a combination of a crystal-field with axial symmetry and spin-orbit coupling leads to a suppression of spin-lattice and spin-spin interactions, resulting in remarkably slow spin relaxation. Our optical measurements on an ensemble of Mo impurities in SiC show a spin lifetime $T_1$ of $2,4$ s at $2$ K.

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Cited by in corpus (7)

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• Nuclear Spin Quantum Memory in Silicon Carbide
• Hyperfine Structure of Transition Metal Defects in SiC
• Spin Structure and Resonant Driving of Spin-1/2 Defects in SiC
• Hyperfine-mediated transitions between electronic spin-1/2 levels of transition metal defects in SiC
• Transition metal ion ensembles in crystals as solid-state coherent spin-photon interfaces: The case of nickel in magnesium oxide