70 citations · 93 across the 3 of their papers we have counts for
3 papers
Unraveling the electronic structure of silicon vacancy centers in 4H-SiC
Ali Tayefeh Younesi, Minh Tuan Luu, Christopher Linderälv +7
Point defects in silicon carbide (SiC), particularly the negatively-charged silicon vacancy () in 4H-SiC, are leading candidates for scalable quantum technolog…
Spin-relaxation times exceeding seconds for color centers with strong spin-orbit coupling in SiC
Carmem M. Gilardoni, Tom Bosma, Danny van Hien +6
Spin-active color centers in solids show good performance for quantum technologies. Several transition-metal defects in SiC offer compatibility with telecom and semiconductor indus…
Identification and tunable optical coherent control of transition-metal spins in silicon carbide
Tom Bosma, Gerrit J. J. Lof, Carmem M. Gilardoni +9
Color centers in wide-bandgap semiconductors are attractive systems for quantum technologies since they can combine long-coherent electronic spin and bright optical properties. Sev…