70 citations · 93 across the 3 of their papers we have counts for
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cond-mat.mtrl-sci2026
Unraveling the electronic structure of silicon vacancy centers in 4H-SiC
Ali Tayefeh Younesi, Minh Tuan Luu, Christopher Linderälv +7
Point defects in silicon carbide (SiC), particularly the negatively-charged silicon vacancy () in 4H-SiC, are leading candidates for scalable quantum technolog…
cond-mat.mtrl-sci2018★ 70 cited
Identification and tunable optical coherent control of transition-metal spins in silicon carbide
Tom Bosma, Gerrit J. J. Lof, Carmem M. Gilardoni +9
Color centers in wide-bandgap semiconductors are attractive systems for quantum technologies since they can combine long-coherent electronic spin and bright optical properties. Sev…