Unraveling the electronic structure of silicon vacancy centers in 4H-SiC

Ali Tayefeh Younesi, Minh Tuan Luu, Christopher Linderälv +7

Point defects in silicon carbide (SiC), particularly the negatively-charged silicon vacancy (${\mathrm{V}}_{\mathrm{Si}}^{-}$) in 4H-SiC, are leading candidates for scalable quantum technolog…