216 citations · 326 across the 6 of their papers we have counts for
6 papers
InAs-Al Hybrid Devices Passing the Topological Gap Protocol
Morteza Aghaee, Arun Akkala, Zulfi Alam +124
We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majora…
Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC
Olger V. Zwier, Tom Bosma, Carmem M. Gilardoni +5
Electromagnetically induced transparency (EIT) is a phenomenon that can provide strong and robust interfacing between optical signals and quantum coherence of electronic spins. In…
Broadband single-mode planar waveguides in monolithic 4H-SiC
Tom Bosma, Joop Hendriks, Misagh Ghezellou +3
Color-center defects in silicon carbide promise opto-electronic quantum applications in several fields, such as computing, sensing and communication. In order to scale down and com…
Spin-relaxation times exceeding seconds for color centers with strong spin-orbit coupling in SiC
Carmem M. Gilardoni, Tom Bosma, Danny van Hien +6
Spin-active color centers in solids show good performance for quantum technologies. Several transition-metal defects in SiC offer compatibility with telecom and semiconductor indus…
Circuit-Model Analysis for Spintronic Devices with Chiral Molecules as Spin Injectors
Xu Yang, Tom Bosma, Bart J. van Wees +1
Recent research discovered that charge transfer processes in chiral molecules can be spin selective and named the effect chiral-induced spin selectivity (CISS). Follow-up work stud…
Identification and tunable optical coherent control of transition-metal spins in silicon carbide
Tom Bosma, Gerrit J. J. Lof, Carmem M. Gilardoni +9
Color centers in wide-bandgap semiconductors are attractive systems for quantum technologies since they can combine long-coherent electronic spin and bright optical properties. Sev…