High mobility InAs 2DEGs on GaSb substrates: a platform for mesoscopic quantum transport

Abstract

High mobility, strong spin-orbit coupling, and large Landé g-factor make the two-dimensional electron gas (2DEG) in InAs quantum wells grown on nearly-lattice-matched GaSb substrates an attractive platform for mesoscopic quantum transport experiments. Successful operation of mesoscopic devices relies on three key properties: electrical isolation from the substrate; ability to fully deplete the 2DEG and control residual sidewall conduction with lithographic gates; and high mobility to ensure ballistic transport over mesoscopic length scales. Simultaneous demonstration of these properties has remained elusive for InAs 2DEGs on GaSb substrates. Here we report on heterostructure design, molecular beam epitaxy growth, and device fabrication that result in high carrier mobility and full 2DEG depletion with minimal residual edge conduction. Our results provide a pathway to fully-controlled 2DEG-based InAs mesoscopic devices.

5 figures

References in corpus (16)

• Realizing Majorana zero modes in superconductor-semiconductor heterostructures
• Scaling of Majorana Zero-Bias Conductance Peaks
• Zero-Energy Modes from Coalescing Andreev States in a Two-Dimensional Semiconductor-Superconductor Hybrid Platform
• Inducing Superconducting Correlation in Quantum Hall Edge States
• All-Electric Quantum Point Contact Spin Valve
• Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility >35 x10^6 cm^2/Vs in AlGaAs/GaAs quantum wells grown by MBE
• Universal density scaling of disorder-limited low-temperature conductivity in high-mobility two-dimensional systems
• Scattering mechanisms of highest-mobility InAs/Al${}_x$Ga${}_{1-x}$Sb quantum wells
• Edge transport in InAs and InAs/GaSb quantum wells
• Mobility in excess of $10^6$ cm${}^2$/Vs in InAs quantum wells grown on lattice mismatched InP substrates
• Gating of high-mobility InAs metamorphic heterostructures
• An apparent metal insulator transition in high mobility 2D InAs heterostructures
• On the limits to mobility in InAs quantum wells with nearly lattice-matched barriers
• Materials considerations for forming the topological insulator phase in InAs/GaSb heterostructures
• Observation of fractional quantum Hall effect in an InAs quantum well
• Passivation of Edge States in Etched InAs Sidewalls

Cited by in corpus (18)

• Evidence of topological superconductivity in planar Josephson junctions
• InAs-Al Hybrid Devices Passing the Topological Gap Protocol
• Basal-plane growth of cadmium arsenide by molecular beam epitaxy
• Contribution of top barrier materials to high mobility in near-surface InAs quantum wells grown on GaSb(001)
• A Gate-Defined Quantum Point Contact in an InAs Two-Dimensional Electron Gas
• Counterflowing edge current and its equilibration in quantum Hall devices with sharp edge potential: Roles of incompressible strips and contact configuration
• Controlling Fermi level pinning in near-surface InAs quantum wells
• Mobility exceeding 100,000 cm${}^2$/Vs in modulation-doped shallow InAs quantum wells coupled to epitaxial aluminum
• Few-electron Single and Double Quantum Dots in an InAs Two-Dimensional Electron Gas
• Edgeless and Purely Gate-Defined Nanostructures in InAs Quantum Wells
• Measurements of spin-orbit interaction in epitaxially grown InAs nanosheets
• Semiconductor-based electron flying qubits: Review on recent progress accelerated by numerical modelling
• Observation of an Abrupt 3D-2D Morphological Transition in Thin Al Layers Grown by MBE on InGaAs surface
• Electrically tunable spin-orbit interaction in an InAs nanosheet
• High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells
• Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects
• Gate tuning of fractional quantum Hall states in InAs two-dimensional electron gas
• Clean quantum point contacts in an InAs quantum well grown on a lattice-mismatched InP substrate