Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure
arXiv:1806.07105 · doi:10.1063/1.5029220
Abstract
We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy (MBE). X-ray photoelectron spectroscopy (XPS) suggests an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurement, reflecting the high quality of the h-BN films. The measured valence band maximum (VBM) located at 2.8 eV below the Fermi level reveals the presence of undoped h-BN films (band gap ~ 6 eV). These results demonstrate that, although only weak van der Waals interactions are present between h-BN and graphite, a long range ordering of h-BN can be obtained even on polycrystalline graphite via van der Waals epitaxy, offering the prospect of large area, single layer h-BN.
arXiv comment9 pages, 4 figures SI 5 pages 2 figures
References in corpus (13)
- Van der Waals heterostructures
- Boron nitride substrates for high-quality graphene electronics
- Hexagonal boron nitride is an indirect bandgap semiconductor
- Atomically thin boron nitride: a tunnelling barrier for graphene devices
- Photo-induced Doping in Graphene/Boron Nitride Heterostructures
- Dislocations and Grain Boundaries in Two-Dimensional Boron Nitride
- Tunable Quasiparticle Band Gap in Few Layer GaSe/graphene Van der Waals Heterostructures
- Quasi-freestanding and single-atom thick layer of hexagonal boron nitride as a substrate for graphene synthesis
- Schottky barriers at hexagonal boron nitride/metal interfaces: a first principles study
- Excitons in boron nitride single layer
- Epitaxial hexagonal boron nitride on Ir(111): A work function template
- Exciton energy-momentum map of hexagonal boron nitride
- Exciton interference in hexagonal boron nitride
Cited by in corpus (9)
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- Suppressed out-of-plane polarizability of free excitons in monolayer WSe
- Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial Deposition
- Wafer-scale Programmed Assembly of One-atom-thick Crystals
- Structural, electronic, and optical properties of periodic graphene/h-BN van der Waals heterostructures
- Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride
- Current-induced brightening of vacancy-related emitters in hexagonal boron nitride