Wafer-scale Programmed Assembly of One-atom-thick Crystals
arXiv:2507.22677 · doi:10.1021/acs.nanolett.1c04139
Abstract
Crystalline films offer various physical properties based on the modulation of their thicknesses and atomic structures. The layer-by-layer assembly of atomically thin crystals provides powerful means to arbitrarily design films at the atomic-level, which are unattainable with existing growth technologies. However, atomically-clean assembly of the materials with high scalability and reproducibility remains challenging. We report programmed crystal assembly (PCA) of graphene and monolayer hexagonal boron nitride (ML hBN), assisted by van der Waals interactions, to form wafer-scale films of pristine interfaces with near-unity yield. The atomic configurations of the films are tailored with layer-resolved compositions and in-plane crystalline orientations. We demonstrate batch-fabricated tunnel device arrays with modulation of the resistance over orders of magnitude by thickness-control of the hBN barrier with single-atom precision, and large-scale, twisted multilayer graphene with programmable electronic band structures and crystal symmetries. Our results constitute an important development in the artificial design of large-scale films.
65 pages, 22 figures
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Cited by in corpus (8)
- Magic-Angle Twisted Symmetric Trilayer Graphene as Topological Heavy Fermion Problem
- Anomalous optical response of graphene on hexagonal boron nitride substrates
- Kekulé spirals and charge transfer cascades in twisted symmetric trilayer graphene
- Moiré-Induced Transport in CVD-Based Small-Angle Twisted Bilayer Graphene
- Step-directed Epitaxy of Uni-directional Hexagonal Boron Nitride on Vicinal Ge(110)
- Chern-Textured Exciton Insulators with Valley Spiral Order in Moiré Materials
- Terahertz Landau level spectroscopy of Dirac fermions in millimeter-scale twisted bilayer graphene
- Weak localization and universal conductance fluctuations in large area twisted bilayer graphene