Large Proximity-Induced Spin Lifetime Anisotropy in Transition Metal Dichalcogenide/Graphene Heterostructures

Abstract

Van-der-Waals heterostructures have become a paradigm for designing new materials and devices, in which specific functionalities can be tailored by combining the properties of the individual 2D layers. A single layer of transition metal dichalcogenide (TMD) is an excellent complement to graphene (Gr), since the high quality of charge and spin transport in Gr is enriched with the large spin-orbit coupling of the TMD via proximity effect. The controllable spin-valley coupling makes these heterostructures particularly attractive for spintronic and opto-valleytronic applications. In this work, we study spin precession in a monolayer MoSe2/Gr heterostructure and observe an unconventional, dramatic modulation of the spin signal, showing one order of magnitude longer lifetime of out-of-plane spins (40 ps) compared with that of in-plane spins (3.5 ps). This demonstration of a large spin lifetime anisotropy in TMD/Gr heterostructures, is a direct evidence of induced spin-valley coupling in Gr and provides an accessible route for manipulation of spin dynamics in Gr, interfaced with TMDs.

Main manuscript(6 pages, 3 figures), supplementary info(19 pages, 10 figures)

References in corpus (13)

• 2D materials and van der Waals heterostructures
• Graphene Spintronics
• Spin-Orbit Proximity Effect in Graphene
• Weak localisation in graphene flakes
• Visibility of dichalcogenide nanolayers
• Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride
• Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves
• Tunable spin-orbit coupling and symmetry-protected edge states in graphene/WS${}_2$
• Spin transport in high quality suspended graphene devices
• Spin Hall effect and Weak Antilocalization in Graphene/Transition Metal Dichalcogenide Heterostructures
• Contact induced spin relaxation in Hanle spin precession measurements
• Optospintronics in graphene via proximity coupling
• Graphene-WS${}_2$ heterostructures for tunable spin injection and spin transport

Cited by in corpus (15)

• Van der Waals heterostructures for spintronics and opto-spintronics
• Spin-orbit driven band inversion in bilayer graphene by van der Waals proximity effect
• Twist-angle dependence of the proximity spin-orbit coupling in graphene on transition-metal dichalcogenides
• Quantum Anomalous Hall Effects in Graphene from Proximity-Induced Uniform and Staggered Spin-Orbit and Exchange Coupling
• Spin-split band hybridization in graphene proximitized with $\alpha$-RuCl${}_3$ nanosheets
• Gate tunability of highly efficient spin-to-charge conversion by spin Hall effect in graphene proximitized with WSe${}_2$
• Spin transport in high-mobility graphene on WS${}_2$ substrate with electric-field tunable proximity spin-orbit interaction
• Spin Hall Effect in Bilayer Graphene Combined with an Insulator up to Room Temperature
• Robust Spin Interconnect with Isotropic Spin Dynamics in Chemical Vapour Deposited Graphene Layers and Boundaries
• Spin Hall and inverse spin galvanic effects in graphene with strong interfacial spin-orbit coupling: a quasi-classical Green's function approach
• Charge-spin conversion signal in WTe2 van der Waals hybrid devices with a geometrical design
• Rashba Effect and Raman Spectra of Tl${}_2$O/PtS${}_2$ Heterostructure
• Carrier Drift Control of Spin Currents in Graphene-Based Spin-Current Demultiplexers
• Zero-field spin resonance in graphene with proximity-induced spin-orbit coupling
• Valley-Polarized Quantum Anomalous Hall Phase in Bilayer Graphene with Layer-Dependent Proximity Effects