Valley Magnetoelectricity in Single-Layer MoS2

Abstract

Magnetoelectric (ME) effect, the phenomenon of inducing magnetization by application of an electric field or vice versa, holds great promise for magnetic sensing and switching applications. Studies of the ME effect have so far focused on the control of the electron spin degree of freedom (DOF) in materials such as multiferroics and conventional semiconductors. Here, we report a new form of the ME effect based on the valley DOF in two-dimensional (2D) Dirac materials. By breaking the three-fold rotational symmetry in single-layer MoS2 via a uniaxial stress, we have demonstrated the pure electrical generation of valley magnetization in this material, and its direct imaging by Kerr rotation microscopy. The observed out-of-plane magnetization is independent of in-plane magnetic field, linearly proportional to the in-plane current density, and optimized when the current is orthogonal to the strain-induced piezoelectric field. These results are fully consistent with a theoretical model of valley magnetoelectricity driven by Berry curvature effects. Furthermore, the effect persists at room temperature, opening possibilities for practical valleytronic devices.

12 pages, 4 figures

References in corpus (8)

• The Valley Hall Effect in MoS2 Transistors
• Magnetic Control of Valley Pseudospin in Monolayer WSe2
• Valley Zeeman Effect in Elementary Optical Excitations of a Monolayer WSe2
• Breaking of valley degeneracy by magnetic field in monolayer MoSe2
• Detecting Topological Currents in Graphene Superlattices
• Valley Splitting and Polarization by the Zeeman Effect in Monolayer MoSe2
• Robust optical emission polarization in MoS2 monolayers through selective valley excitation
• Ultrafast Generation of Pseudo-magnetic Field for Valley Excitons in WSe2 Monolayers

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