Control of interlayer delocalization in 2H transition metal dichalcogenides

Abstract

It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers - depending on the balance between spin-orbit inter- action and interlayer hopping. This balance depends on layer thickness, momentum space symmetry points and applied gate fields. A good quantitative agreement of predictions and measurements of the quantum confined Stark effect in gated MoS2 systems unveils intralayer excitons as major source for the observed photoluminesence.

arXiv comment11 pages, 15 figures

References in corpus (26)

• Atomically thin MoS2: A new direct-gap semiconductor
• Two Dimensional Atomic Crystals
• Van der Waals heterostructures
• Maximally-localized generalized Wannier functions for composite energy bands
• Maximally localized Wannier functions: Theory and applications
• Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
• Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions
• Light-emitting diodes by bandstructure engineering in van der Waals heterostructures
• Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
• Electrical Transport Properties of Single-Layer WS2
• Evolution of Interlayer Coupling in Twisted MoS2 Bilayers
• Gate-tunable Memristive Phenonmena Mediated by Grain Boundaries in Single Layer MoS2
• Large spin splitting in the conduction band of transition metal dichalcogenide monolayers
• Band-Like Transport in High Mobility Unencapsulated Single-Layer MoS2 Transistors
• Magnetoelectric effects and valley controlled spin quantum gates in transition metal dichalcogenide bilayers
• Spin-Layer Locking Effects in Optical Orientation of Exciton Spin in Bilayer WSe2
• Ultimate Thin Vertical p-n Junction Composed of 2D Layered Molybdenum Disulfide
• \textit{Ab-initio} Tight-Binding Hamiltonian for Transition Metal Dichalcogenides
• Probing the Electron States and Metal-Insulator Transition Mechanisms in Atomically Thin MoS2 Based on Vertical Heterostructures
• Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials
• Investigation of Band-Offsets at Monolayer-Multilayer MoS2 Junctions by Scanning Photocurrent Microscopy
• High Performance Molybdenum Disulfide Amorphous Silicon Heterojunction Photodetector
• Stark effect spectroscopy of mono- and few-layer MoS${}_2$
• Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene
• Two-Dimensional Valley Electrons and Excitons in Noncentrosymmetric 3R MoS${}_2$
• Partly occupied Wannier functions: Construction and applications

Cited by in corpus (8)

• Electronic Transport in Two-Dimensional Materials
• Interlayer hybridization and moiré superlattice minibands for electrons and excitons in heterobilayers of transition-metal dichalcogenides
• Self-Aligned van der Waals Heterojunction Diodes and Transistors
• The Wannier Function Software Ecosystem for Materials Simulations
• Channel thickness optimization for ultra thin and 2D chemically doped TFETs
• Mode-space-compatible inelastic scattering in atomistic nonequilibrium Green's function implementations
• Band tail formation in mono and multilayered transition metal dichalcogenides: A detailed assessment and a quick-reference guide
• Introduction of Multi-particle Büttiker Probes -- Bridging the Gap between Drift Diffusion and Quantum Transport