25 citations · 25 across the 2 of their papers we have counts for
4 papers
A Roadmap for Controlled and Efficient n-type Doping of Self-assisted GaAs Nanowires Grown by Molecular Beam Epitaxy
Marta Orrù, Eva Repiso, Stefania Carapezzi +7
N-type doping of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions…
Aluminum Oxide at the Monolayer Limit via Oxidant-free Plasma-Assisted Atomic Layer Deposition on GaN
Alex Henning, Johannes D. Bartl, Andreas Zeidler +7
Atomic layer deposition (ALD) is an essential tool in semiconductor device fabrication that allows the growth of ultrathin and conformal films to precisely form heterostructures an…
Charge Separation at Mixed-Dimensional Single and Multilayer MoS2/Silicon Nanowire Heterojunctions
Alex Henning, Vinod K. Sangwan, Hadallia Bergeron +4
Layered two-dimensional (2-D) semiconductors can be combined with other low-dimensional semiconductors to form non-planar mixed-dimensional van der Waals (vdW) heterojunctions whos…
Self-Aligned van der Waals Heterojunction Diodes and Transistors
Vinod K. Sangwan, Megan E. Beck, Alex Henning +7
A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-align…