566 citations · 833 across the 10 of their papers we have counts for
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Spatially-Modulated Silicon Interface Energetics via Hydrogen Plasma-Assisted Atomic Layer Deposition of Ultrathin Alumina
Alex Henning, Johannes D. Bartl, Lukas Wolz +12
Atomic layer deposition (ALD) is a key technique for the continued scaling of semiconductor devices, which increasingly relies on reproducible and scalable processes for interface…
Scalable transparent conductive thin films with electronically passive interfaces for direct chemical vapor deposition of 2D materials
Theresa Grünleitner, Alex Henning, Michele Bissolo +5
We present a novel transparent conductive support structure for two-dimensional (2D) materials that provides an electronically passive 2D/3D interface while also enabling facile in…
A Roadmap for Controlled and Efficient n-type Doping of Self-assisted GaAs Nanowires Grown by Molecular Beam Epitaxy
Marta Orrù, Eva Repiso, Stefania Carapezzi +7
N-type doping of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions…
Surface NMR using quantum sensors in diamond
Kristina S. Liu, Alex Henning, Markus W. Heindl +5
Characterization of the molecular properties of surfaces under ambient or chemically reactive conditions is a fundamental scientific challenge. Moreover, many traditional analytica…
Aluminum Oxide at the Monolayer Limit via Oxidant-free Plasma-Assisted Atomic Layer Deposition on GaN
Alex Henning, Johannes D. Bartl, Andreas Zeidler +7
Atomic layer deposition (ALD) is an essential tool in semiconductor device fabrication that allows the growth of ultrathin and conformal films to precisely form heterostructures an…