activity
20152021
most citedOptimum High-k Oxide for the Best Performance of Ultra-scaled Double-Gate MOSFETs

93 citations · 205 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.mes-hall2021★ 13 cited

Band tail formation in mono and multilayered transition metal dichalcogenides: A detailed assessment and a quick-reference guide

Prasad Sarangapani, James Charles, Tillmann Kubis

Transition metal dichalcogenides (TMDs) are promising candidates for a wide variety of ultrascaled electronic, quantum computation, and optoelectronic applications. The exponential…

physics.app-ph2020

Introduction of Multi-particle Büttiker Probes -- Bridging the Gap between Drift Diffusion and Quantum Transport

Kuang-Chung Wang, Roberto Grassi, Yuanchen Chu +6

State-of-the-art industrial semiconductor device modeling is based on highly efficient Drift-Diffusion (DD) models that include some quantum corrections for nanodevices. In contras…

physics.app-ph2019★ 18 cited

Thermal boundary resistance predictions with non-equilibrium Green's function and molecular dynamics simulations

Yuanchen Chu, Jingjing Shi, Kai Miao +6

The non-equilibrium Green's function (NEGF) method with Büttiker probe scattering self-energies is assessed by comparing its predictions for the thermal boundary resistance with mo…

cond-mat.mes-hall2019★ 39 cited

Non-equilibrium Green's function predictions of band tails and band gap narrowing in III-V semiconductors and nanodevices

Prasad Sarangapani, Yuanchen Chu, James Charles +1

High-doping induced Urbach tails and band gap narrowing play a significant role in determining the performance of tunneling devices and optoelectronic devices such as tunnel field-…

physics.app-ph2018★ 9 cited

Explicit screening full band quantum transport model for semiconductor nanodevices

Yuanchen Chu, Prasad Sarangapani, James Charles +2

State of the art quantum transport models for semiconductor nanodevices attribute negative (positive) unit charges to states of the conduction (valence) band. Hybrid states that en…

cond-mat.mes-hall2017★ 30 cited

Control of interlayer delocalization in 2H transition metal dichalcogenides

Kuang-Chung Wang, Teodor K. Stanev, Daniel Valencia +14

It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective…

cs.DC2015★ 3 cited

NEMO5: Achieving High-end Internode Communication for Performance Projection Beyond Moore's Law

Robert Andrawis, Jose David Bermeo, James Charles +12

Electronic performance predictions of modern nanotransistors require nonequilibrium Green's functions including incoherent scattering on phonons as well as inclusion of random allo…

cond-mat.mes-hall2015★ 93 cited

Optimum High-k Oxide for the Best Performance of Ultra-scaled Double-Gate MOSFETs

Mehdi Salmani-Jelodar, Hesameddin Ilatikhameneh, SungGeun Kim +2

A widely used technique to mitigate the gate leakage in the ultra-scaled metal oxide semiconductor field effect transistors (MOSFETs) is the use of high-k dielectrics, which provid…