48 citations · 48 across the 2 of their papers we have counts for
4 papers
Towards sub-30nm Contacted Gate Pitch, Forked Contact and Dynamically-Doped Nanosheets to Enhance Si and 2D Materials Device Scaling
Aryan Afzalian, Zubair Ahmed, Julien Ryckaert
We propose a novel Forked-Contacts, Dynamically-Doped Multigate transistor as ultimate scaling booster for both Si and 2D materials in aggressively-scaled nanosheet devices. Using…
Advanced DFT-NEGF transport techniques for novel 2D-material and device exploration including HfS2/WSe2 van-der-Waals Heterojunction TFET and WTe2/WS2 metal/semiconductor contact
Aryan Afzalian, Elaheh Akhoundi, Gautam Gaddemane +2
We present, here, advanced DFT-NEGF techniques that we have implemented in our ATOmistic MOdelling Solver, ATOMOS, to explore transport in novel materials and devices and in partic…
Ab-initio NEGF Perspective of Ultra-Scaled CMOS: From 2D-material Fundamentals to Novel Dynamically-Doped Transistors
Aryan Afzalian
Using accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10 nm scaling for high-per…
A High-Performance InAs/GaSb Core-Shell Nanowire Line-Tunneling TFET: An Atomistic Mode-Space NEGF Study
Aryan Afzalian, Gerben Doornbos, Tzer-Min Shen +2
Using a tight-binding mode-space NEGF technique, we explore the essential physics, design and performance potential of the III-V core-shell (CS) nanowire (NW) heterojunction TFET.…