Ab-initio NEGF Perspective of Ultra-Scaled CMOS: From 2D-material Fundamentals to Novel Dynamically-Doped Transistors

Abstract

Using accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10 nm scaling for high-performance CMOS applications. We show that a combination of good electrostatic control together with a high mobility is paramount to meet the stringent roadmap targets. Such requirements typically play against each other at sub-10 nm gate length for MOS transistors made of conventional semiconductor materials like Si, Ge or III-V and dimensional scaling is expected to end around 12 nm gate-length. We demonstrate that using alternative 2D channel materials, such as the less explored HfS2 or ZrS2, high-drive current down to about 6 nm is, however, achievable. We also propose a novel transistor concept, the Dynamically-Doped Field-Effect Transistor, that scales better than its MOSFET counterpart. Used in combination with a high-mobility material such as HfS2, it allows for keeping the stringent high-performance CMOS on current and competitive energy-delay performance, when scaling down to 1 nm gate length using a single-gate architecture and an ultra-compact design. The Dynamically-Doped Field-Effect Transistor further addresses the grand-challenge of doping in ultra-scaled devices and 2D materials in particular.

References in corpus (18)

• Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
• Two Dimensional Atomic Crystals
• Black phosphorus field-effect transistors
• 2D materials and van der Waals heterostructures
• The Computational 2D Materials Database: High-Throughput Modeling and Discovery of Atomically Thin Crystals
• Two dimensional semiconductors with possible high room temperature mobility
• Ab-initio study on the possible doping strategies for MoS${}_2$ monolayers
• Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors
• Two Dimensional Quantum Mechanical Modeling of Nanotransistors
• Intrinsic Transport Properties of Electrons and Holes in Monolayer Transition Metal Dichalcogenides
• Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors
• Ab-initio transport properties of nanostructures from maximally-localized Wannier functions
• Screening for Two dimensional MX${}_2$ semiconductors with possible high room temperature mobility
• Mermin-Wagner theorem, flexural modes, and degraded carrier mobility in 2D crystals with broken horizontal mirror (${\sigma }_{\mathrm{h}}$) symmetry
• S2DS: Physics-Based Compact Model for Circuit Simulation of Two-Dimensional Semiconductor Devices Including Non-Idealities
• Theoretical studies of electronic transport in mono- and bi-layer phosphorene: A critical overview
• 2-D materials for ultra-scaled field-effect transistors: hundred candidates under the ab initio microscope
• An efficient tight-binding mode-space NEGF model enabling up to million atoms III-V nanowire MOSFETs and TFETs simulations

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• Advanced DFT-NEGF transport techniques for novel 2D-material and device exploration including HfS2/WSe2 van-der-Waals Heterojunction TFET and WTe2/WS2 metal/semiconductor contact
• Computational design of NDR tunnel diodes with high peak-to-valley current ratio based on two-dimensional cold metals: The case of NbSi${}_2$N${}_4$/HfSi${}_2$N${}_4$/NbSi${}_2$N${}_4$ lateral heterojunction diode
• Multifunctional steep-slope spintronic transistors with spin-gapless-semiconductor or spin-gapped-metal electrodes
• Spatially Mapping Phonon Drag in Ultrascaled 5-nm Silicon Nanowire Field-Effect Transistor Based on a Quantum Hydrodynamic Formalism
• Fully coupled electron-phonon transport in two-dimensional-material-based devices using efficient FFT-based self-energy calculations