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20112023
most citedAb-initio NEGF Perspective of Ultra-Scaled CMOS: From 2D-material Fundamentals to Novel Dynamically-Doped Transistors

73 citations · 214 across the 8 of their papers we have counts for

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cond-mat.mes-hall2021★ 48 cited

Advanced DFT-NEGF transport techniques for novel 2D-material and device exploration including HfS2/WSe2 van-der-Waals Heterojunction TFET and WTe2/WS2 metal/semiconductor contact

Aryan Afzalian, Elaheh Akhoundi, Gautam Gaddemane +2

We present, here, advanced DFT-NEGF techniques that we have implemented in our ATOmistic MOdelling Solver, ATOMOS, to explore transport in novel materials and devices and in partic…