73 citations · 214 across the 8 of their papers we have counts for
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cond-mat.mes-hall2017★ 26 cited
An efficient tight-binding mode-space NEGF model enabling up to million atoms III-V nanowire MOSFETs and TFETs simulations
Aryan Afzalian, Tim Vasen, Peter Ramvall +1
We report the capability to simulate in a quantum mechanical tight-binding (TB) atomistic fashion NW devices featuring several hundred to millions of atoms and diameter up to 18 nm…
cond-mat.mes-hall2017★ 30 cited
Control of interlayer delocalization in 2H transition metal dichalcogenides
Kuang-Chung Wang, Teodor K. Stanev, Daniel Valencia +14
It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective…