Atomically-thin Ohmic Edge Contacts Between Two-dimensional Materials

Abstract

With the decrease of the dimensions of electronic devices, the role played by electrical contacts is ever increasing, eventually coming to dominate the overall device volume and total resistance. This is especially problematic for monolayers of semiconducting transition metal dichalcogenides (TMDs), which are promising candidates for atomically thin electronics. Ideal electrical contacts to them would require the use of similarly thin electrode materials while maintaining low contact resistances. Here we report a scalable method to fabricate ohmic graphene edge contacts to two representative monolayer TMDs - MoS2 and WS2. The graphene and TMD layer are laterally connected with wafer-scale homogeneity, no observable overlap or gap, and a low average contact resistance of 30 k$\Omega$ $\mu$m. The resulting graphene edge contacts show linear current-voltage (IV) characteristics at room temperature, with ohmic behavior maintained down to liquid helium temperatures.

References in corpus (14)

• Atomically thin MoS2: A new direct-gap semiconductor
• Two Dimensional Atomic Crystals
• Van der Waals heterostructures
• Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
• Field-effect tunneling transistor based on vertical graphene heterostructures
• Electrical Transport Properties of Single-Layer WS2
• Towards barrier free contact to MoS2 using graphene electrodes
• Room-temperature gating of molecular junctions using few-layer graphene nanogap electrodes
• Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers
• Parallel Stitching of Two-Dimensional Materials
• Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer $Mo{S}_2$ by Amorphous $Ti{O}_x$ Encapsulation
• Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS2 Layers
• Modulation of Schottky barrier height in graphene/MoS2/metal vertical heterostructure with large current ON-OFF ratio
• Spatially Resolved Photo-Excited Charge Carrier Dynamics in Phase-Engineered Monolayer MoS2

Cited by in corpus (26)

• Universal Scaling Laws in Schottky Heterostructures Based on Two-Dimensional Materials
• Immunity to Scaling in MoS2 Transistors Using Edge Contacts
• Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics
• Sub-Nanometer Channels Embedded in Two-Dimensional Materials
• One-dimensional edge contacts to a monolayer semiconductor
• Via Method for Lithography Free Contact and Preservation of 2D Materials
• Structure, preparation, and applications of 2D material-based metal-semiconductor heterostructures
• Electron transport through metal/MoS2 interfaces: edge- or area-dependent process?
• High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact
• Quantum Transport in Two-Dimensional WS${}_2$ with High-Efficiency Carrier Injection Through Indium Alloy Contacts
• Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS2
• An Inside Look at the Ti-MoS2 Contact in Ultra-thin Field Effect Transistor with Atomic Resolution
• Strain-engineering of twist-angle in graphene/hBN superlattice devices
• Diode-like Selective Enhancement of Carrier Transport through Metal-Semiconductor Interface Decorated by Monolayer Boron Nitride
• Schottky barrier lowering due to interface states in 2D heterophase devices
• CVD Graphene Contacts for Lateral Heterostructure MoS${}_2$ Field Effect Transistors
• Monolayer WS${}_2$ electro- and photo-luminescence enhancement by TFSI treatment
• Universal transfer and stacking technique of van der Waals heterostructures for spintronics
• Growth and applications of two-dimensional single crystals
• Dirac half-semimetallicity and antiferromagnetism in graphene nanoribbon/hexagonal boron nitride heterojunctions
• Stability of destructive interference antiresonances in electron transport through graphene nanostructures
• Direct-Write Printed Contacts to Layered and 2D Materials
• Electrical contact properties between Yb and few-layer WS${}_2$
• Microscopic Green's function approach for generalized Dirac Hamiltonians
• A back-to-back diode model applied to MoS2 van der Waals Schottky diodes
• Improving Electric Contacts to Two-Dimensional Semiconductors