Sign-reversal of the in-plane resistivity anisotropy in hole-doped iron pnictides
arXiv:1202.4430 · doi:10.1038/ncomms2933
Abstract
The in-plane anisotropy of the electrical resistivity across the coupled orthorhombic and magnetic transitions of the iron pnictides has been extensively studied in the parent and electron-doped compounds. All these studies universally show that the resistivity across the long orthorhombic axis - along which the spins couple antiferromagnetically below the magnetic transition temperature - is smaller than the resistivity of the short orthorhombic axis , i. e. . Here we report that in the hole-doped compounds BaKFeAs, as the doping level increases, the resistivity anisotropy initially becomes vanishingly small, and eventually changes sign for sufficiently large doping, i. e. . This observation is in agreement with a recent theoretical prediction that considers the anisotropic scattering of electrons by spin-fluctuations in the orthorhombic/nematic state.
This paper has been replaced by the new version offering new explanation of the experimental results first reported here
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