Memory function approach to in-plane anisotropic resistivity in the antiferromagnetic phase of iron arsenide superconductors
arXiv:1312.2322 · doi:10.1103/PhysRevB.90.125157
Abstract
We theoretically examine anisotropy of in-plane resistivity in the striped antiferromagnetic phase of an iron arsenide superconductor by applying a memory function approach to the ordered phase with isotropic nonmagnetic impurity. We find that the anisotropy of the scattering rate is independent of carrier density when the topology of the Fermi surface is changed after the introduction of holes. On the other hand, the anisotropy of the Drude weight monotonically decreases reflecting the distortion of the Dirac Fermi surface and eventually leads to the reverse of anisotropy of resistivity, being consistent with experiment. The origin of the anisotropy is thus attributed to the interplay of impurity scattering and anisotropic electronic states.
7 pages, 4 figures
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- Importance of Fermi Surface Topology for In-Plane Resistivity Anisotropy in Hole- and Electron-Doped Ba(FeTM)As (TM=Cr, Mn and Co)
- Anisotropy of the DC conductivity due to orbital-selective spin fluctuations in the nematic phase of iron superconductors
- Drude weight anisotropy in the doped iron pnictides: the primary role of orbital weight redistribution along the reconstructed Fermi surfaces
- Emergence of pure spin current in doped excitonic magnets
- Origin of in-plane anisotropic resistivity in the antiferromagnetic phase of FeTe