Electrical spin injection and transport in Germanium

Abstract

We report the first experimental demonstration of electrical spin injection, transport and detection in bulk germanium (Ge). The non-local magnetoresistance in n-type Ge is observable up to 225K. Our results indicate that the spin relaxation rate in the n-type Ge is closely related to the momentum scattering rate, which is consistent with the predicted Elliot-Yafet spin relaxation mechanism for Ge. The bias dependence of the nonlocal magnetoresistance and the spin lifetime in n-type Ge is also investigated.

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• Crossover from spin accumulation into interface states to spin injection in the germanium conduction band
• Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature
• Large enhancement in the generation efficiency of pure spin currents in Ge using Heusler-compound Co_2FeSi electrodes
• Intrinsic Spin Lifetime of Conduction Electrons in Germanium
• Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts
• Electrical spin injection and detection in Germanium using three terminal geometry
• Injection and detection of spin in a semiconductor by tunneling via interface states
• Anisotropy-driven spin relaxation in germanium
• Large spin accumulation voltages in epitaxial Mn5Ge3 contacts on Ge without oxide tunnel barrier
• Room temperature manipulation of long lifetime spins in metallic-like carbon nanospheres
• Electrical injection and detection of spin accumulation in Ge at room temperature
• Dynamical Spin Injection into p-type Germanium at Room Temperature
• Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements
• Observation of large spin accumulation voltages in non-degenerate Si spin devices due to spin drift effect: Experiments and theory
• Spin Drift in Highly Doped n-type Si
• Spin Accumulation in Nondegenerate and Heavily Doped p-Type Germanium
• Electrical and thermal spin accumulation in germanium
• Magnetotransport in ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films
• Giant enhancement of spin detection sensitivity in (Ga,Mn)As/GaAs Esaki diodes
• Non-local opto-electrical spin injection and detection in germanium at room temperature
• Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si
• Nonmonotonic bias dependence of local spin accumulation signals in ferromagnet/semiconductor lateral spin-valve devices
• Electric field control of spin lifetimes in Nb-SrTiO${}_3$ by spin-orbit fields
• Pure spin current transport in a SiGe alloy
• Investigation of spin scattering mechanism in silicon channels of Fe/MgO/Si lateral spin valves
• Spin-dependent inter- and intra-valley electron-phonon scattering in germanium
• Temperature dependence of the spin relaxation in highly degenerate ZnO thin films
• Hot-electron effect in spin relaxation of electrically injected electrons in intrinsic Germanium
• TiO2 as an electrostatic template for epitaxial growth of EuO on MgO(001) by reactive molecular beam epitaxy
• Lateral spin injection and detection through electrodeposited Fe/GaAs contacts
• Electrical spin injection from ferromagnet into an InAs heterostructures through MgO tunnel barrier
• Optical manipulation of the Rashba effect in germanium quantum wells
• Bias current dependence of the spin lifetime in insulating Al${}_{0.3}$Ga${}_{0.7}$As
• Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas