Non-volatile switching in graphene field effect devices
arXiv:0805.4095 · doi:10.1109/LED.2008.2001179
Abstract
The absence of a band gap in graphene restricts its straight forward application as a channel material in field effect transistors. In this letter, we report on a new approach to engineer a band gap in graphene field effect devices (FED) by controlled structural modification of the graphene channel itself. The conductance in the FEDs is switched between a conductive "on-state" to an insulating "off-state" with more than six orders of magnitude difference in conductance. Above a critical value of an electric field applied to the FED gate under certain environmental conditions, a chemical modification takes place to form insulating graphene derivatives. The effect can be reversed by electrical fields of opposite polarity or short current pulses to recover the initial state. These reversible switches could potentially be applied to non-volatile memories and novel neuromorphic processing concepts.
14 pages, 4 figures, submitted to IEEE EDL
References in corpus (14)
- Electric Field Effect in Atomically Thin Carbon Films
- Ultrahigh electron mobility in suspended graphene
- Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
- Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
- Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
- Chaotic Dirac billiard in graphene quantum dots
- Graphane: a two-dimensional hydrocarbon
- A Graphene Field-Effect Device
- Transport measurements across a tunable potential barrier in graphene
- Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction
- Epitaxial graphene transistors on SiC substrates
- Simulation of Graphene Nanoribbon Field Effect Transistors
- Top-gated graphene field-effect-transistors formed by decomposition of SiC
- A graphene-based electrochemical switch
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- Resonant low-energy electron scattering on short-range impurities in graphene
- Opportunities in Electrically Tunable 2D Materials Beyond Graphene: Recent Progress and Future Outlook
- Large Transport Gap Modulation in Graphene via Electric Field Controlled Reversible Hydrogenation
- Control of proton transport and hydrogenation in double-gated graphene
- On the switching mechanism and optimisation of ion irradiation enabled 2D memristors
- Giant Magnetoresistance in Bilayer Graphene Nanoflakes