506 citations
- Forschungsverbund BerlinDE128 papers
- Centre National de la Recherche ScientifiqueFR22 papers
- Leibniz Institute for Crystal GrowthDE15 papers
- Humboldt-Universität zu BerlinDE14 papers
- RWTH Aachen UniversityDE14 papers
- Universidad Autónoma de MadridES13 papers
- Laboratoire National des Champs Magnétiques IntensesFR10 papers
- University of SheffieldGB10 papers
- Helmholtz-Zentrum Berlin für Materialien und EnergieDE9 papers
- Pennsylvania State UniversityUS9 papers
- United States Naval Research LaboratoryUS9 papers
- Institute of Computational Mathematics and Mathematical GeophysicsRU8 papers
19 papers · 1 filter
Stoichiometric Control and Optical Properties of BaTiO3 Thin Films Grown by Hybrid MBE
Benazir Fazlioglu Yalcin, Albert Suceava, Tatiana Kuznetsova +3
BaTiO3 is a technologically relevant material in the perovskite oxide class with above room temperature ferroelectricity and a very large electro optical coefficient, making it hig…
Adsorption-controlled plasma-assisted molecular beam epitaxy of LaInO3 on DyScO3(110): Growth window, strain relaxation, and domain pattern
Georg Hoffmann, Martina Zupancic, Detlef Klimm +4
We report the growth of epitaxial LaInO3 on DyScO3(110) substrates by adsorption-controlled plasma-assisted molecular beam epitaxy (PA-MBE). The adsorption-controlled growth was mo…
Giant optomechanical coupling and dephasing protection with cavity exciton-polaritons
P. Sesin, A. S. Kuznetsov, G. Rozas +6
Electronic resonances can significantly enhance the photon-phonon coupling in cavity optomechanics, but are normally avoided due to absorption losses and dephasing by inhomogeneous…
Acceptor and compensating donor doping of single crystalline SnO (001) films grown by molecular beam epitaxy and its perspectives for optoelectronics and gas-sensing
Kingsley Egbo, Jonas Lähnemann, Andreas Falkenstein +2
(La and Ga)-doped tin monoxide (stannous oxide, tin (II) oxide, SnO) thin films were grown by plasma-assisted and suboxide molecular beam epitaxy with dopant concentrations ranging…
Identification of acoustically induced spin resonances of Si vacancy centers in 4H-SiC
T. Vasselon, A. Hernández-Mínguez, M. Hollenbach +2
The long-lived and optically addressable spin states of silicon vacancies () in 4H-SiC make them promising qubits for quantum communication and sensing. The…
Carrier Recombination in Highly Uniform and Phase-Pure GaAs/(Al,Ga)As Core/Shell Nanowire Arrays on Si(111): Mott Transition and Internal Quantum Efficiency
Miriam Oliva, Timur Flissikowski, Michał Góra +7
GaAs-based nanowires are among the most promising candidates for realizing a monolithical integration of III-V optoelectronics on the Si platform. To realize their full potential f…