activity
20122020
most citedSelf-Assembled formation of long, thin, and uncoalesced GaN nanowires on crystalline TiN films

37 citations · 71 across the 7 of their papers we have counts for

collaborators

8 papers

physics.ins-det2020

Resolution of a bent-crystal spectrometer for X-ray free electron laser pulses: diamond vs. silicon

Vladimir Kaganer, Ilia Petrov, Liubov Samoylova

The resolution function of a spectrometer based on a strongly bent single crystal (bending radius of 10 cm or less) is evaluated. It is shown that the resolution is controlled by t…

cond-mat.mtrl-sci2020

Small-angle X-ray scattering from GaN nanowires on Si(111): facet truncation rods, facet roughness, and Porod's law

Vladimir M. Kaganer, Oleg V. Konovalov, Sergio Fernández-Garrido

Small-angle X-ray scattering from GaN nanowires grown on Si(111) is studied experimentally and modeled by means of Monte Carlo simulations. It is shown that the scattering intensit…

cond-mat.mtrl-sci2020

Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires

G. Calabrese, D. van Treeck, V. M. Kaganer +6

We investigate the strain state of ensembles of thin and nearly coalescence-free self-assembled GaN nanowires prepared by plasma-assisted molecular beam epitaxy on Ti/AlO$_{3…

cond-mat.mtrl-sci2019

Determination of the carrier diffusion length in GaN from cathodoluminescence maps around threading dislocations: fallacies and opportunities

Vladimir M. Kaganer, Jonas Lähnemann, Carsten Pfüller +3

We investigate, both theoretically and experimentally, the drift, diffusion, and recombination of excitons in the strain field of an edge threading dislocation intersecting the GaN…

physics.ins-det2019

X-ray diffraction from strongly bent crystals and spectroscopy of XFEL pulses

Vladimir Kaganer, Ilia Petrov, Liubov Samoylova

The use of strongly bent crystals in spectrometers for pulses of a hard x-ray free-electron laser is explored theoretically. Diffraction is calculated in both dynamical and kinemat…

cond-mat.mtrl-sci201837 cited

Self-Assembled formation of long, thin, and uncoalesced GaN nanowires on crystalline TiN films

David van Treeck, Gabriele Calabrese, Jelle J. W. Goertz +4

We investigate in detail the self-assembled nucleation and growth of GaN nanowires by molecular beam epitaxy on crystalline TiN films. We demonstrate that this type of substrate al…