113 citations · 588 across the 30 of their papers we have counts for
4 papers · 1 filter
Ga-polar (In,Ga)N/GaN quantum wells vs. N-polar (In,Ga)N quantum disks in GaN nanowires: Comparative analysis of carrier recombination, diffusion, and radiative efficiency
F. Feix, T. Flissikowski, K. K. Sabelfeld +5
We investigate the radiative and nonradiative recombination processes in planar (In,Ga)N/GaN(0001) quantum wells and (In,Ga)N quantum disks embedded in GaN nanowires…
Influence of strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures on their electronic properties
Oliver Marquardt, Thilo Krause, Vladimir Kaganer +3
We present a systematic study of the influence of elastic strain relaxation on the built-in electrostatic potentials and the electronic properties of axial (In,Ga)N/GaN nanowire he…
Statistical analysis of the shape of one-dimensional nanostructures: determining the coalescence degree of spontaneously formed GaN nanowires
Oliver Brandt, Sergio Fernández-Garrido, Johannes K. Zettler +4
Single GaN nanowires formed spontaneously on a given substrate represent nanoscopic single crystals free of any extended defects. However, due to the high area density of thus form…
Correlation between In content and emission wavelength of InGaN/GaN nanowire heterostructures
Martin Wölz, Jonas Lähnemann, Oliver Brandt +7
GaN nanowire ensembles with axial InGaN multi-quantum wells (MQWs) were grown by molecular beam epitaxy. In a series of samples, we varied the In content in the MQWs from almost ze…