37 citations · 72 across the 8 of their papers we have counts for
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Nanoscale mapping of the full strain tensor, rotation and composition in partially relaxed InGaN layers by scanning X-ray diffraction microscopy
Carsten Richter, Vladimir M. Kaganer, Armelle Even +5
Strain and composition play a fundamental role in semiconductor physics, since they are means to tune the electronic and optical properties of a material and hence develop new devi…
Small-angle X-ray scattering from GaN nanowires on Si(111): facet truncation rods, facet roughness, and Porod's law
Vladimir M. Kaganer, Oleg V. Konovalov, Sergio Fernández-Garrido
Small-angle X-ray scattering from GaN nanowires grown on Si(111) is studied experimentally and modeled by means of Monte Carlo simulations. It is shown that the scattering intensit…
Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires
G. Calabrese, D. van Treeck, V. M. Kaganer +6
We investigate the strain state of ensembles of thin and nearly coalescence-free self-assembled GaN nanowires prepared by plasma-assisted molecular beam epitaxy on Ti/AlO$_{3…
Determination of the carrier diffusion length in GaN from cathodoluminescence maps around threading dislocations: fallacies and opportunities
Vladimir M. Kaganer, Jonas Lähnemann, Carsten Pfüller +3
We investigate, both theoretically and experimentally, the drift, diffusion, and recombination of excitons in the strain field of an edge threading dislocation intersecting the GaN…
Self-Assembled formation of long, thin, and uncoalesced GaN nanowires on crystalline TiN films
David van Treeck, Gabriele Calabrese, Jelle J. W. Goertz +4
We investigate in detail the self-assembled nucleation and growth of GaN nanowires by molecular beam epitaxy on crystalline TiN films. We demonstrate that this type of substrate al…
Bunches of misfit dislocations on the onset of relaxation of SiGe/Si(001) epitaxial films revealed by high-resolution x-ray diffraction
Vladimir Kaganer, Tatjana Ulyanenkova, Andrei Benediktovitch +2
The experimental x-ray diffraction patterns of a SiGe/Si(001) epitaxial film with a low density of misfit dislocations are modeled by the Monte Carlo method. It is…