activity
20072026
most citedSelf-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy

113 citations · 588 across the 30 of their papers we have counts for

collaborators
Showing 2020Show all

6 papers · 1 filter

cond-mat.mtrl-sci2020★ 40 cited

Carrier diffusion in GaN -- a cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations

Jonas Lähnemann, Vladimir M. Kaganer, Karl K. Sabelfeld +5

We investigate the impact of threading dislocations with an edge component (a or a+c-type) on carrier recombination and diffusion in GaN(0001) layers close to the surface as well a…

cond-mat.mtrl-sci2020★ 16 cited

Carrier diffusion in GaN -- a cathodoluminescence study. II: Ambipolar vs. exciton diffusion

Oliver Brandt, Vladimir M. Kaganer, Jonas Lähnemann +8

We determine the diffusion length of excess carriers in GaN by spatially resolved cathodoluminescence spectroscopy utilizing a single quantum well as carrier collector or carrier s…

physics.ins-det2020

Resolution of a bent-crystal spectrometer for X-ray free electron laser pulses: diamond vs. silicon

Vladimir Kaganer, Ilia Petrov, Liubov Samoylova

The resolution function of a spectrometer based on a strongly bent single crystal (bending radius of 10 cm or less) is evaluated. It is shown that the resolution is controlled by t…

cond-mat.mtrl-sci2020

Small-angle X-ray scattering from GaN nanowires on Si(111): facet truncation rods, facet roughness, and Porod's law

Vladimir M. Kaganer, Oleg V. Konovalov, Sergio Fernández-Garrido

Small-angle X-ray scattering from GaN nanowires grown on Si(111) is studied experimentally and modeled by means of Monte Carlo simulations. It is shown that the scattering intensit…

cond-mat.mtrl-sci2020

Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires

G. Calabrese, D. van Treeck, V. M. Kaganer +6

We investigate the strain state of ensembles of thin and nearly coalescence-free self-assembled GaN nanowires prepared by plasma-assisted molecular beam epitaxy on Ti/AlO$_{3…

cond-mat.mtrl-sci2020★ 17 cited

Carrier diffusion in GaN -- a cathodoluminescence study. I: Temperature-dependent generation volume

Uwe Jahn, Vladimir M. Kaganer, Karl K. Sabelfeld +8

The determination of the carrier diffusion length of semiconductors such as GaN and GaAs by cathodoluminescence imaging requires accurate knowledge about the spatial distribution o…