131 citations · 736 across the 28 of their papers we have counts for
28 papers
Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene
Sergio Fernández-Garrido, Manfred Ramsteiner, Guanhui Gao +10
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we e…
In-situ study and modeling of the reaction kinetics during molecular beam epitaxy of GeO2 and its etching by Ge
Wenshan Chen, Kingsley Egbo, Hans Tornatzky +3
Rutile GeO2 has been predicted to be an ultra-wide bandgap semiconductor suitable for future power electronics devices while quartz-like GeO2 shows piezoelectric properties. To exp…
Large-area synthesis of ferromagnetic FeGeTe/graphene van der Waals heterostructures with Curie temperature above room temperature
H. Lv, A. da Silva, A. I. Figueroa +14
Van der Waals (vdW) heterostructures combining layered ferromagnets and other two-dimensional (2D) crystals are promising building blocks for the realization of ultra-compact devic…
Adsorption-controlled plasma-assisted molecular beam epitaxy of LaInO3 on DyScO3(110): Growth window, strain relaxation, and domain pattern
Georg Hoffmann, Martina Zupancic, Detlef Klimm +4
We report the growth of epitaxial LaInO3 on DyScO3(110) substrates by adsorption-controlled plasma-assisted molecular beam epitaxy (PA-MBE). The adsorption-controlled growth was mo…
Carrier Recombination in Highly Uniform and Phase-Pure GaAs/(Al,Ga)As Core/Shell Nanowire Arrays on Si(111): Mott Transition and Internal Quantum Efficiency
Miriam Oliva, Timur Flissikowski, Michał Góra +7
GaAs-based nanowires are among the most promising candidates for realizing a monolithical integration of III-V optoelectronics on the Si platform. To realize their full potential f…
Density control of GaN nanowires at the wafer scale using self-assembled SiN patches on sputtered TiN(111)
Thomas Auzelle, Miriam Oliva, Philipp John +3
The self-assembly of heteroepitaxial GaN nanowires using either molecular beam epitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) mostly results in wafer-scale ensembles wi…