131 citations · 736 across the 28 of their papers we have counts for
6 papers · 1 filter
Exchange-striction driven ultrafast nonthermal lattice dynamics in NiO
Y. W. Windsor, D. Zahn, R. Kamrla +7
We use femtosecond electron diffraction to study ultrafast lattice dynamics in the highly correlated antiferromagnetic (AF) semiconductor NiO. Using the scattering vector (Q) depen…
Electronic and magnetic properties of -FeGe films embedded in vertical spin valve devices
Dietmar Czubak, Samuel Gaucher, Lars Oppermann +5
We studied metastable -FeGe, a novel layered tetragonal material, embedded as a spacer layer in spin valve structures with ferromagnetic FeSi and CoFeSi electrodes.…
SnO/-Ga2O3 vertical heterojunction diodes
Melanie Budde, Daniel Splith, Piero Mazzolini +6
Vertical heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped -type SnO layers with hole concentrations ranging from $p=10…
Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass
Melanie Budde, Piero Mazzolini, Johannes Feldl +6
Transparent conducting or semiconducting oxides are important materials for (transparent) optoelectronics and power electronics applications. While most of these oxides can be dope…
Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy
Melanie Budde, Carsten Tschammer, Philipp Franz +7
NiO layers were grown on MgO(100), MgO(110), and MgO(111) substrates by plasma-assisted molecular beam epitaxy under Ni-flux limited growth conditions. Single crystalline growth wi…
Enhanced radiative efficiency in GaN nanowires grown on sputtered TiN: effects of surface electric fields
T. Auzelle, M. Azadmand, T. Flissikowski +8
GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formatio…