506 citations
- Forschungsverbund BerlinDE128 papers
- Centre National de la Recherche ScientifiqueFR22 papers
- Leibniz Institute for Crystal GrowthDE15 papers
- Humboldt-Universität zu BerlinDE14 papers
- RWTH Aachen UniversityDE14 papers
- Universidad Autónoma de MadridES13 papers
- Laboratoire National des Champs Magnétiques IntensesFR10 papers
- University of SheffieldGB10 papers
- Helmholtz-Zentrum Berlin für Materialien und EnergieDE9 papers
- Pennsylvania State UniversityUS9 papers
- United States Naval Research LaboratoryUS9 papers
- Institute of Computational Mathematics and Mathematical GeophysicsRU8 papers
20 papers · 1 filter
Ferroelectricity and Rashba effect in GeTe
C. Rinaldi, D. Di Sante, A. Giussani +9
GeTe has been proposed as the father compound of a new class of functional materials displaying bulk Rashba effects coupled to ferroelectricity: ferroelectric Rashba semiconductors…
Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN
Hong Li, Lutz Geelhaar, Henning Riechert +1
Crystal morphologies are important for the design and functionality of devices based on low-dimensional nanomaterials. The equilibrium crystal shape (ECS) is a key quantity in this…
Facetted growth of Fe3Si shells around GaAs nanowires on Si(111)
Bernd Jenichen, Maria Hilse, Jens Herfort +1
GaAs nanowires and GaAs/Fe3Si core/shell nanowire structures were grown by molecular-beam epitaxy on oxidized Si(111) substrates and characterized by transmission electron microsco…
Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes
Mattia Musolino, Abbes Tahraoui, Sergio Fernández-Garrido +4
AlN layers with thicknesses between 2 and 14 nm were grown on Si(111) substrates by molecular beam epitaxy. The effect of the AlN layer thickness on the morphology and nucleation t…
Controlled pore formation on mesoporous single crystalline silicon nanowires: threshold and mechanisms
Stefan Weidemann, Maximilian Kockert, Dirk Wallacher +4
Silicon nanowires are prepared by the method of the two-step metal-assisted wet chemical etching. We have analyzed the structure of solid, rough and porous nanowire surfaces of bor…
Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires
Mattia Musolino, Abbes Tahraoui, Friederich Limbach +5
We investigate the effect of the p-type top contact on the optoelectronic characteristics of light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by mol…