Second harmonic generation in GaAs photonic crystal cavities in (111)B and (001) crystal orientations

Abstract

We demonstrate second harmonic generation in photonic crystal cavities in (001) and (111)B oriented GaAs. The fundamental resonance is at 1800 nm, leading to second harmonic below the GaAs bandgap. Below-bandgap operation minimizes absorption of the second harmonic and two photon absorption of the pump. Photonic crystal cavities were fabricated in both orientations at various in-plane rotations of the GaAs substrate. The rotation dependence and farfield patterns of the second harmonic match simulation. We observe similar maximum efficiencies of 1.2 %/W in (001) and (111)B oriented GaAs.

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References in corpus (4)

• Integrated GaN photonic circuits on silicon (100) for second harmonic generation
• Second harmonic generation in phase matched aluminum nitride waveguides
• Strong coupling between single photons in semiconductor microcavities
• Second Harmonic Generation in Photonic Crystal Cavities in (111)-Oriented GaAs

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