Cross-sectional STM of Mn-doped GaAs: theory and experiment

Abstract

We report first-principles calculations of the energetics and simulated scanning tunneling microscopy (STM) images for Mn dopants near the GaAs (110) surface, and compare the results with cross-sectional STM images. The Mn configurations considered here include substitutionals, interstitials, and complexes of substitutionals and interstitials in the first three layers near the surface. Based on detailed comparisons of the simulated and experimental images, we identify three types of Mn configurations imaged at the surface: (1) single Mn substitutionals, (2) pairs of Mn substitutionals, and (3) complexes of Mn substitutionals and interstitials.

arXiv comment7 journal pages, 6 figures, (preprint with high quality figures available at http://cst-www.nrl.navy.mil/~erwin/mngaasstm/)

References in corpus (9)

• Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
• Effects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs
• High Curie temperature GaMnAs obtained by resistance-monitored annealing
• Highly enhanced Curie temperatures in low temperature annealed (Ga,Mn)As epilayers
• Spin interactions of interstitial Mn ions in ferromagnetic GaMnAs
• Self-compensation in manganese-doped ferromagnetic semiconductors
• Ferromagnetism in Mn doped GaAs due to substitutional-interstitial complexes
• Phase Diagram of a Model for Diluted Magnetic Semiconductors Beyond Mean-Field Approximations
• Correlated defects, metal-insulator transition, and magnetic order in ferromagnetic semiconductors

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• Determination of the local concentrations of Mn interstitials and antisite defects in GaMnAs
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• Spatial structure of Mn-Mn acceptor pairs in GaAs
• Magnetic anisotropy switching in (Ga,Mn)As with increasing hole concentration
• Computational and experimental imaging of Mn defects on GaAs (110) cross-sectional surface
• Spatial distribution of local tunneling conductivity due to interference and Coulomb interaction effects for deep and shallow impurities on semiconductor surfaces
• Ion-beam modification of the magnetic properties of GaMnAs epilayers
• Large Magnetic Moments of Arsenic-Doped Mn Clusters and their Relevance to Mn-Doped III-V Semiconductor Ferromagnetism
• The Structure of GaSb Digitally Doped with Mn
• Tailoring the magnetism of GaMnAs films by ion irradiation
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• Fe Nanoclusters on the Ge(001) Surface Studied by Scanning Tunneling Microscopy, Density Functional Theory Calculations and X-Ray Magnetic Circular Dichroism
• Atmospheric oxygen in Mn doped GaAs/GaAs(0 0 1) thin films grown by molecular beam epitaxy
• Out-of-plane magnetization reversal processes of (Ga,Mn)As with two different hole concentrations
• The influence of tunneling matrix elements modification due to on-site Coulomb interaction on local tunneling conductivity
• Growth of and optical emission from GaMnAs thin films grown by molecular beam epitaxy