activity
19962007
most citedEngineering electron and hole tunneling with asymmetric InAs quantum dot molecules

170 citations · 378 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2007★ 19 cited

Structure of AlSb(001) and GaSb(001) Surfaces Under Extreme Sb-rich Conditions

Jeffery Houze, Sungho Kim, Seong-Gon Kim +2

We use density-functional theory to study the structure of AlSb(001) and GaSb(001) surfaces. Based on a variety of reconstruction models, we construct surface stability diagrams fo…

cond-mat.mtrl-sci2006★ 170 cited

Engineering electron and hole tunneling with asymmetric InAs quantum dot molecules

A. S. Bracker, M. Scheibner, M. F. Doty +6

Most self-assembled quantum dot molecules are intrinsically asymmetric with inequivalent dots resulting from imperfect control of crystal growth. We have grown vertically-aligned p…

cond-mat.mtrl-sci2004★ 10 cited

The Structure of GaSb Digitally Doped with Mn

G. I. Boishin, J. M. Sullivan, L. J. Whitman

Cross sectional scanning tunneling microscopy (XSTM) and density functional theory have been used to characterize the structure of GaSb digitally doped with Mn. The Mn dopants are…

cond-mat.mtrl-sci2003★ 46 cited

Cross-sectional STM of Mn-doped GaAs: theory and experiment

J. M. Sullivan, G. I. Boishin, L. J. Whitman +3

We report first-principles calculations of the energetics and simulated scanning tunneling microscopy (STM) images for Mn dopants near the GaAs (110) surface, and compare the resul…

cond-mat.mtrl-sci1999★ 49 cited

Frenkel-Kontorova Model of Vacancy-Line Interactions on Ga/Si(112): Formalism

S. C. Erwin, A. A. Baski, L. J. Whitman +1

We describe in greater detail the exactly solvable microscopic model we have developed for analyzing the strain-mediated interaction of vacancy lines in a pseudomorphic adsorbate s…

mtrl-th1996★ 84 cited

Structure and Stability of Si(114)-(2x1)

Steven C. Erwin, Alison A. Baski, Lloyd J. Whitman

We describe a recently discovered stable planar surface of silicon, Si(114). This high-index surface, oriented 19.5 degrees away from (001) toward (111), undergoes a 2x1 reconstruc…