Engineering electron and hole tunneling with asymmetric InAs quantum dot molecules

Abstract

Most self-assembled quantum dot molecules are intrinsically asymmetric with inequivalent dots resulting from imperfect control of crystal growth. We have grown vertically-aligned pairs of InAs/GaAs quantum dots by molecular beam epitaxy, introducing intentional asymmetry that limits the influence of intrinsic growth fluctuations and allows selective tunneling of electrons or holes. We present a systemic investigation of tunneling energies over a wide range of interdot barrier thickness. The concepts discussed here provide an important tool for the systematic design and characterization of more complicated quantum dot nanostructures.

9 pages, 4 figures. To be published in Applied Physics Letters. version 2: Typographical corrections and reference format for journal

References in corpus (4)

• Control and Detection of Singlet-Triplet Mixing in a Random Nuclear Field
• Direct Observation of Controlled Coupling in an Individual Quantum Dot Molecule
• Optically Probing Spin and Charge Interactions in an Tunable Artificial Molecule
• Exciton and negative trion dissociation by an external electric field in vertically coupled quantum dots

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